Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application-Reference-Cited by-同舟云学术

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Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

Published:2019 Issue: Volume:7 Page:1277-1283
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Ishii Y.^ORCID,Lee Y.-J.,Wu W.-F.^ORCID,Maeda K.,Ishimura H.,Miura M.

Funder

Hitachi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08891766.pdf?arnumber=8891766

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device;Materials Science in Semiconductor Processing;2022-03

2. Integration of Si0.7Ge0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabrication;Semiconductor Science and Technology;2021-10-22

3. Fabrication of High-Mobility Si0.7Ge0.3 Channel FinFET for Optimization of Device Electrical Performance;ECS Journal of Solid State Science and Technology;2021-07-01

4. Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio;IEEE Journal of the Electron Devices Society;2020

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