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Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

  • Published:1991-03 Issue:3 Volume:20 Page:279-287
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:JEM

Author:

Hsu T.,Anthony B.,Qian R.,Irby J.,Banerjee S.,Tasch A.,Lin S.,Marcus H.,Magee C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma cleaning under low pressures based on the domestic microwave oven;Journal of Microwave Power and Electromagnetic Energy;2021-05-06

2. Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layers;Journal of Vacuum Science & Technology A;2021-05

3. In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride;Langmuir;2018-02-12

4. Plasma Stripping, Cleaning, and Surface Conditioning;Handbook of Silicon Wafer Cleaning Technology;2018

5. Overview and Evolution of Silicon Wafer Cleaning Technology ∗;Handbook of Silicon Wafer Cleaning Technology;2018
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