In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride-Reference-Cited by-同舟云学术

In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride

Published:2018-02-12 Issue:8 Volume:34 Page:2619-2629
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Peña Luis Fabián¹^ORCID,Mattson Eric C.¹,Nanayakkara Charith E.¹^ORCID,Oyekan Kolade A.¹,Mallikarjunan Anupama²,Chandra Haripin²,Xiao Manchao²,Lei Xinjian²,Pearlstein Ronald M.²,Derecskei-Kovacs Agnes³,Chabal Yves J.¹^ORCID

Affiliation:

1. Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

2. Versum Materials, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, United States

3. Versum Materials, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195, United States

Funder

Division of Chemistry

Versum Materials

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.7b03522

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5. Transient and Thermal Analysis on Disturbance Immunity for 4 $\mathrm{F}^{2}$ Surrounding Gate 1T-DRAM With Wide Trenched Body

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