Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1−x)Gex surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1978968
Reference44 articles.
1. High-mobility Si and Ge structures
2. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
3. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
4. Ideal hydrogen termination of the Si (111) surface
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