Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors-Reference-Cited by-同舟云学术

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Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Published:2015-06-21 Issue:23 Volume:117 Page:234502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Um Jae Gwang¹,Mativenga Mallory¹,Migliorato Piero¹²,Jang Jin¹

Affiliation:

1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701, South Korea

2. Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA, United Kingdom

Funder

MOTIE/KEIT, Industrial Stragetic Technology Prgram

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922714

Reference25 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

3. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

4. Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

5. Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

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1. Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors;Silicon;2024-08-08

2. Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures;IEEE Transactions on Electron Devices;2022-04

3. Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT;ECS Journal of Solid State Science and Technology;2020-11-01

4. Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation;ECS Journal of Solid State Science and Technology;2018

5. Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT;AIP Advances;2017-12

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