Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures-Reference-Cited by-同舟云学术

Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

Published:2022-04 Issue:4 Volume:69 Page:1876-1882
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xue Gaomin¹,Zou Zhixiang²,Lin Liang²,Chang Yizi³,Ma Rui²,Zhang Ran²,Zhang Deming⁴^ORCID,Wang Yijiao⁴^ORCID,Zeng Lang⁴^ORCID

Affiliation:

1. School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China

2. BOE Technology Corporation, Hefei, China

3. China Research Institute of Film Science and Technology, Beijing, China

4. MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University, Beijing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

International Mobility Project

Joint Funds of the National Natural Science Foundation of China

National Key Technology Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09728737.pdf?arnumber=9728737

Reference39 articles.

1. Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

2. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

3. Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

4. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

5. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

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