Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751849
Reference18 articles.
1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
2. Material characteristics and applications of transparent amorphous oxide semiconductors
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. 69.1: Photo-Leakage Current in ZnO TFTs for Transparent Electronics
5. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
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