Epitaxial silicide formation by multi‐shot irradiation of Ni thin films on Si with Nd laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335360
Reference12 articles.
1. Laser‐induced reactions of platinum and other metal films with silicon
2. Electron beam induced reactions in metal/Si systems
3. Epitaxial NiSi2formation by pulsed ion beam annealing
4. Titanium and nickel silicide formation afterQ‐switched laser and multiscanning electron beam irradiation
5. Epitaxial NiSi2formation by pulsed laser irradiation of thin Ni layers deposited on Si substrates
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1. Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation;Journal of Alloys and Compounds;2019-06
2. Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001);Microelectronic Engineering;2019-01
3. Pulsed Laser Annealing Technology for Nano-Scale Fabrication of Silicon-Based Devices in Semiconductors ☆;Advances in Laser Materials Processing;2018
4. Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition;ACS Applied Materials & Interfaces;2016-12-29
5. Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal;Journal of Applied Physics;2011-10
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