Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition-Reference-Cited by-同舟云学术

Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

Published:2016-12-29 Issue:1 Volume:9 Page:566-572
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Jinbum¹²,Choi Seongheum³,Park Taejin¹²,Kim Jinyong³,Kim Chulsung¹,Cha Taeho¹,Lee Hyangsook³⁴,Lee Eunha⁴,Won Jung Yeon⁴,Lee Hyung-Ik⁴,Hyun Sangjin¹,Kim Sunjung¹,Shin Dongsuk¹,Kim Yihwan¹,Kwon Keewon²,Kim Hyoungsub³^ORCID

Affiliation:

1. Semiconductor R&D Center, Samsung Electronics, Hwaseong 18488, Republic of Korea

2. Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b12968

Reference42 articles.

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4. High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

5. Thermal stability study of NiSi and NiSi2 thin films

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