Electronic growth of Ag islands on MoS2-Reference-Cited by-同舟云学术

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Electronic growth of Ag islands on MoS2

Published:2018-07-19 Issue:8S1 Volume:57 Page:08NB10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Cheng-Hsun-Tony,Chang Ho-Hsiang,Jiang Pei-Cheng,Su Wei-Bin

Funder

Ministry of Science and Technology, Taiwan

Academia Sinica

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S1/a=08NB10/pdf

Reference38 articles.

1. Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

2. Interfacial reactions and microstructural evolution of periodic Ni nanodot arrays on N 2 + -implanted amorphous Si substrates

3. Enhanced visible-light-driven photocatalytic performance of Ag/AgGaO2 metal semiconductor heterostructures

4. Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

5. Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface dependence of electronic growth of Cu(111) on MoS2;Applied Physics Letters;2024-08-19

2. Thickness dependency of nonlinear optical properties in ITO/Sn composite films;Chinese Optics Letters;2023

3. Criteria for electronic growth of Au on layered semiconductors;Journal of Applied Physics;2022-12-28

4. Polarization-dependent electronic structure of Ag quantum well states on the MoS2 (0001) surface using ARPES and DFT studies;Physical Review B;2022-12-22

5. Implementation of Ag/ SiO2 nanofilms for metamaterial engineering;Results in Physics;2022-04

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