Criteria for electronic growth of Au on layered semiconductors

Author:

Kidd Timothy E.1ORCID,Kruckenberg Preston1,Gorgen Colin1,Lukashev Pavel V.1ORCID,Stollenwerk Andrew J.1ORCID

Affiliation:

1. Physics Department, University of Northern Iowa, Cedar Falls, Iowa 50614, USA

Abstract

An electronic growth mode has been reported to occur in several noble metals on MoS2 but has not been observed on other layered semiconductors. In this work, the experiments show that Au(111) islands initially follow an electronic growth mode on WS2, matching the quantization seen in Au/MoS2. However, while epitaxial nanostructures with similar features are observed on WSe2, there is no sign of electronic growth. Binding energy calculations show that multiple bonding sites have nearly the same energy on both WS2 and MoS2, while Au strongly prefers a single bonding site on WSe2. Having multiple sites with the same energy gives flexibility in interfacial bonding that can alleviate strain from the 9+% lattice mismatch in these systems, which would, otherwise, easily suppress quantum size effects from electronic growth modes. These results should be useful in predicting which systems undergo quantized electronic growth on layered semiconductors.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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