A generalized plasma etching model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341335
Reference12 articles.
1. A plasma etching model based on a generalized transport approach
2. Generalized fluid equations for parallel transport in collisional to weakly collisional plasmas
3. CO laser annealing of arsenic‐implanted silicon
4. Computer simulation of a CF4plasma etching silicon
5. Basic chemistry and mechanisms of plasma etching
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2. Shape-based optimal estimation and design of curve evolution processes with application to plasma etching;IEEE Transactions on Automatic Control;2001
3. Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition;Journal of Applied Physics;2000-11-15
4. Expression of the Si Etch Rate in a CF 4 Plasma with Four Internal Process Variables;Journal of The Electrochemical Society;1999-01-01
5. Surface modification of the poly(ethyleneterephthalate) foil by reactive ion beam bombardment;Vacuum;1996-09
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