CO laser annealing of arsenic‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331102
Reference7 articles.
1. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation
2. Annealing of phosphorus‐ion‐implanted silicon using a CO2laser
3. CW CO2-laser annealing of arsenic implanted silicon
4. Front and back surface cw CO2-laser annealing of arsenic ion-implanted silicon
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1. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
2. A generalized plasma etching model;Journal of Applied Physics;1988-10-15
3. A plasma etching model based on a generalized transport approach;Journal of Applied Physics;1987-09-15
4. A review of laser beam applications for processing silicon;Contemporary Physics;1983-09
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