A plasma etching model based on a generalized transport approach
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339461
Reference22 articles.
1. Plasma etching A ’’pseudo‐black‐box’’ approach
2. Control of relative etch rates of SiO2 and Si in plasma etching
3. Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its Compounds
4. Basic chemistry and mechanisms of plasma etching
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