Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1311808
Reference54 articles.
1. Low dielectric constant materials for interlayer dielectric
2. A Synthetic Approach to RF Plasma Modeling Verified by Experiments: Demonstration of a Predictive and Complete Plasma Simulator
3. Complete plasma physics, plasma chemistry, and surface chemistry simulation of SiO2 and Si etching in CF4 plasmas
4. SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator.
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