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Nitrogen-rich indium nitride

Published:2004-06 Issue:11 Volume:95 Page:6124-6128
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Butcher K. S. A.,Wintrebert-Fouquet M.,Chen P. P.-T.,Tansley T. L.,Dou H.,Shrestha S. K.,Timmers H.,Kuball M.,Prince K. E.,Bradby J. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1711173

Reference18 articles.

1. Physical properties of InN with the band gap energy of 1.1eV

2. Unusual properties of the fundamental band gap of InN

3. Band Gap of Hexagonal InN and InGaN Alloys

4. Electron mobility in indium nitride

5. Electron mobilities in gallium, indium, and aluminum nitrides

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3. Reactive Sputtering Growth of Indium Nitride Thin Films on Flexible Substrate Under Different Substrate Temperatures;Journal of Physics: Conference Series;2020-05-01

4. Influence of sputtering power and Ar–N2 flow on the structure and optical properties of indium nitride films prepared by magnetron sputtering;Radiation Effects and Defects in Solids;2019-09-11

5. Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method;Solid State Phenomena;2019-04

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