Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment-Reference-Cited by-同舟云学术

Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment

Published:2007-04-09 Issue:15 Volume:90 Page:152906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Tae Joo,Kim Jeong Hwan,Seo Min Ha,Jang Jae Hyuck,Hwang Cheol Seong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2721845

Reference10 articles.

1. Reaction–diffusion in high-k dielectrics on Si

2. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

3. Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors

4. Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature

5. Y. Morisaki, Y. Sugita, K. Irino, and T. Aoyama, Extended Abstracts of the International Workshop on Gate Insulator (IEEE, New York, 2001), p. 184.

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