Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers
Author:
Affiliation:
1. Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, South Korea
2. System-LSI Division, Samsung Electronics Co. Ltd, Gyeonggido 446-712, South Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5012172
Reference34 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. High performance germanium MOSFETs
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