Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors-Reference-Cited by-同舟云学术

Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors

Published:2006-05 Issue:9 Volume:99 Page:094501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Park Jaehoo,Park Tae Joo,Cho Moonju,Kim Seong Keun,Hong Sug Hun,Kim Jeong Hwan,Seo Minha,Hwang Cheol Seong,Won Jeong Yeon,Jeong Ranju,Choi Jung-Hae

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2193163

Reference22 articles.

1. Proceedings of the 2003 International Semiconductor Device Research Symposium;Degraeve R.,2003

2. Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor

3. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density

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