Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1885167
Reference10 articles.
1. High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant
2. Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
3. Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics
4. Optimized Nitridation of Al[sub 2]O[sub 3] Interlayers for Atomic-Layer-Deposited HfO[sub 2] Gate Dielectric Films
5. Direct tunneling leakage current and scalability of alternative gate dielectrics
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3. Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition;Coatings;2019-11-01
4. Random Nanosized Metal Grains and Interface-Trap Fluctuations in Emerging CMOS Technologies;Comprehensive Nanoscience and Nanotechnology;2019
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