Optimized Nitridation of Al[sub 2]O[sub 3] Interlayers for Atomic-Layer-Deposited HfO[sub 2] Gate Dielectric Films-Reference-Cited by-同舟云学术

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Optimized Nitridation of Al[sub 2]O[sub 3] Interlayers for Atomic-Layer-Deposited HfO[sub 2] Gate Dielectric Films

Published:2004 Issue:4 Volume:7 Page:F25
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Park Hong Bae,Cho Moonju,Park Jaehoo,Lee Suk Woo,Hwang Cheol Seong,Jeong Jaehack

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference26 articles.

1. High dielectric constant Hf–Sn–Ti–O thin films

2. High-κ gate dielectrics: Current status and materials properties considerations

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1. Atomic layer deposition of thin films: from a chemistry perspective;International Journal of Extreme Manufacturing;2023-06-14

2. Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate;Applied Surface Science;2019-10

3. Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing;Applied Surface Science;2015-12

4. Interface sulfur passivation using H 2 S annealing for atomic-layer-deposited Al 2 O 3 films on an ultrathin-body In 0.53 Ga 0.47 As-on-insulator;Applied Surface Science;2014-10

5. Oxide films;Atomic Layer Deposition;2013-05-24

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