Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing-Reference-Cited by-同舟云学术

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Published:2015-12 Issue: Volume:357 Page:2306-2312
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jin Hyun Soo,Cho Young Jin,Seok Tae Jun,Kim Dae Hyun,Kim Dae Woong,Lee Sang-Moon,Park Jong-Bong,Yun Dong-Jin,Kim Seong Keun^ORCID,Hwang Cheol Seong,Park Tae Joo

Funder

South Korean government's Ministry of Knowledge Economy

South Korean government

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

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3. Electrical and interfacial characterization of atomic layer deposited high-κ gate dielectrics on GaAs for advanced CMOS devices;Goutam Kumar Dalapati;IEEE Trans. Electron Devices,2007

4. Sulfur as a surface passivation for InP;lyer;Appl. Phys. Lett.,1988

5. Defect states below the conduction band edge of HfO2 grown on InP by atomic layer deposition;Kang;J. Phys. Chem. C,2015

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