Interface sulfur passivation using H 2 S annealing for atomic-layer-deposited Al 2 O 3 films on an ultrathin-body In 0.53 Ga 0.47 As-on-insulator-Reference-Cited by-同舟云学术

Interface sulfur passivation using H 2 S annealing for atomic-layer-deposited Al 2 O 3 films on an ultrathin-body In 0.53 Ga 0.47 As-on-insulator

Published:2014-10 Issue: Volume:315 Page:178-183
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jin Hyun Soo,Cho Young Jin,Lee Sang-Moon,Kim Dae Hyun,Kim Dae Woong,Lee Dongsoo,Park Jong-Bong,Won Jeong Yeon,Lee Myoung-Jae,Cho Seong-Ho,Hwang Cheol Seong,Park Tae Joo

Funder

Korea Institute of Energy Technology Evalution and Planning (KETEP)

National Research Foundation of Korea (NRF)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO;Wang;J. Appl. Phys.,2010

2. Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs;Sugahara;J. Appl. Phys.,1991

3. Structure of S on passivated GaAs (100);Lu;Appl. Phys. Lett.,1993

4. Reduction of recombination velocity on GaAs surface by Ga-S and As-S bond-related surface states from (NH4)2Sx treatment;Sik;J. Electrochem. Soc.,1997

5. Sulfur passivation of GaAs surfaces;Ohno;Phys. Rev. B,1991

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges;Small Science;2023-09-24

2. AlCl3 treatment: Tailoring band alignment and enhancing performance for Cu2Cd0.4Zn0.6SnS4 solar cells;Solar Energy;2022-07

3. Hexene passivation on a p-type Zn-doped InGaAs surface;Materials Chemistry and Physics;2020-09

4. Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate;Applied Surface Science;2019-10

5. Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure;Electronic Materials Letters;2018-12-07