Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure
Author:
Funder
NRF
KSRC
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/article/10.1007/s13391-018-00110-x/fulltext.html
Reference54 articles.
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3. Zhao, B., Wang, F., Chen, H., Zheng, L., Su, L., Zhao, D., Fang, X.: An ultrahigh responsivity (9.7 mA W−1) self-powered solar-blind photodetector based on individual ZnO-Ga2O3 heterostructures. Adv. Funct. Mater. 27, 1700264 (2017)
4. Greco, G., Fiorenza, P., Iucolano, F., Severino, A., Giannazzo, F., Roccaforte, F.: Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties. ACS Appl. Mater. Interfaces 9, 35383 (2017)
5. Wienecke, S., Romanczyk, B., Guidry, M., Li, H., Ahmadi, E., Hestroffer, K., Zheng, X., Keller, S., Mishra, U.K.: N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz. IEEE Electron Device Lett. 38, 359 (2017)
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