Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation-Reference-Cited by-同舟云学术

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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Published:2015-03 Issue:2 Volume:11 Page:217-224
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Luong Tien-Tung,Tran Binh Tinh,Ho Yen-Teng,Ha Minh-Thien-Huu,Hsiao Yu-Lin,Liu Shih-Chien,Chiu Yu-Sheng,Chang Edward-Yi

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-014-4219-y.pdf

Reference47 articles.

1. V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, Solid-State Electron. 47, 1577 (2003).

2. A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J. C. Moreno, and Y. Cordier, ECS Solid-State Lett. 2, 4 (2013).

3. J. J. Xu, S. Keller, G. Parish, S. Heikman, U. K. Mishra, and R. A. York, IEEE Trans. Microwave Theory Tech. 48, 2573 (2000).

4. J. Das, H. Oprins, H. Ji, A. Sarua, W. Ruythooren, J. Derluyn, M. Kuball, M. Germain, and G. Borghs, IEEE Trans. Electron Devices 53, 2696 (2006).

5. H. Yu, D. Caliskan, and E. Ozbay, J. Appl. Phys. 100, 033501 (2006).

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