First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3369540
Reference36 articles.
1. In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity
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4. GaAs(001): Surface Structure and Optical Properties
5. Arsenic-rich GaAs(0 0 1) surface structure
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