In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity-Reference-Cited by-同舟云学术

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In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity

Published:1995-01-30 Issue:5 Volume:66 Page:625-627
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Passlack M.,Hong M.,Schubert E. F.,Kwo J. R.,Mannaerts J. P.,Chu S. N. G.,Moriya N.,Thiel F. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114034

Reference16 articles.

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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