Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment-Reference-Cited by-同舟云学术

Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment

Published:1997-06-01 Issue:6 Volume:144 Page:2106-2115
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sik H.¹,Feurprier Y.²,Cardinaud C.²,Turban G.²,Scavennec A.¹

Affiliation:

1. Centre National d'Etudes des Télécommunications, Laboratorie de Bagneux, 92220 Bagneux Cedex, France

2. Laboratorie des Plasmas et des Couches Minces, IMN UMR 110 CNRS, Université de Nantes, 44322 Nantes Cedex 03, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837749/pdf

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