Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures-Reference-Cited by-同舟云学术

Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

Published:2014 Issue:14 Volume:2 Page:2558-2568
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Sang Young¹²³,Kim Hyo Kyeom¹²³,Lee Jong Ho¹²³,Yu Il-Hyuk¹²³,Lee Jae-Ho¹²³,Hwang Cheol Seong¹²³

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center

2. Seoul National University

3. Seoul 151-744, Korea

Abstract

Variations in the (a) growth rate and (b) film density, measured via the XRR of the HfO₂ films with O₃ and H₂O oxidants as a function of T_s (160–360 °C).

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC32561J

Reference50 articles.

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3. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

4. Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

5. H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers

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