Numerical analysis and design of polarization-multiplexing modulator utilizing the epsilon-near-zero behavior in ITO-HfO2-graphene stacked layers-Reference-Cited by-同舟云学术

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Numerical analysis and design of polarization-multiplexing modulator utilizing the epsilon-near-zero behavior in ITO-HfO2-graphene stacked layers

Published:2024-02-20 Issue:02 Volume:63 Page:
ISSN:0091-3286
Container-title:Optical Engineering
language:
Short-container-title:Opt. Eng.

Author:

Fan Xingxin¹,Shen Yanhua¹,Chen Zhiyu²,Lu Rongguo¹,Shi Daolong¹,Wei Xin¹,Liu Yong¹

Affiliation:

1. University of Electronic Science and Technology of China, School of Optoelectronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China

2. Eindhoven University of Technology, Eindhoven, The Netherlands

Publisher

SPIE-Intl Soc Optical Eng

Reference47 articles.

1. Silicon Nanophotonic Integrated Devices for On-Chip Multiplexing and Switching

2. Multi-Mode Transmitter Based on Silicon Microring Modulators

3. Multimode silicon photonics

4. Polarization-Independent Modulator by Partly Tilted Graphene-Induced Electro-Absorption Effect

5. Indium Tin Oxide Based Dual-Polarization Electro-Optic Intensity Modulator on a Single Silicon Waveguide

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