Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948583
Reference38 articles.
1. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
2. Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO[sub 2] for Gate Dielectric Applications
3. Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3
4. Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOyFilms
5. Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing
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1. Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications;ACS Omega;2023-05-08
2. Effect of thermal annealing sequence on the crystal phase of HfO 2 and charge trap property of Al 2 O 3 /HfO 2 /SiO 2 stacks;Current Applied Physics;2017-10
3. Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics;Ceramics International;2017-02
4. Localized defect states and charge trapping in atomic layer deposited-Al2O3 films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-01
5. Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments;Complexity;2017
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