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Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing

  • Published:2004-11 Issue:18 Volume:85 Page:4115-4117
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Cho M.-H.,Chung K. B.,Chang H. S.,Moon D. W.,Park S. A.,Kim Y. K.,Jeong K.,Whang C. N.,Lee D. W.,Ko D.-H.,Doh S. J.,Lee J. H.,Lee N. I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance;ACS Applied Nano Materials;2024-08-12

2. Self-Heating and Failure in Scalable Graphene Devices;Scientific Reports;2016-06-09

3. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack;Applied Physics Letters;2016-05-02

4. Multilayered ALD HfAlOx and HfO2 for High-Quality Gate Stacks;IEEE Transactions on Device and Materials Reliability;2015-06

5. Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03
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