Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2387126
Reference19 articles.
1. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
2. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
3. Growth and characterization of Hf–aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å
4. Formation of TiO2Thin Films using NH3as Catalyst by Metalorganic Chemical Vapor Deposition
5. Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications
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