Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications-Reference-Cited by-同舟云学术

Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications

Published:1999-07-15 Issue:2 Volume:86 Page:871-880
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Joshi P. C.,Cole M. W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370817

Reference42 articles.

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4. Refractive‐index‐adjustable SiO2‐Ta2O5films for integrated optical circuits

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