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Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOyFilms

  • Published:2014-11-13 Issue:2 Volume:4 Page:N1-N5
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tapily K.,Consiglio S.,Clark R. D.,Vasić R.,Wajda C. S.,Jordan-Sweet J.,Leusink G. J.,Diebold A. C.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-voltage metal-insulator-metal capacitor based on crystalline HfAlOxfilm grown by atomic layer deposition;Journal of Vacuum Science & Technology B;2019-01

2. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?;Japanese Journal of Applied Physics;2017-06-01

3. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack;Applied Physics Letters;2016-05-02

4. Interface state density engineering in Hf1-xZrxO2/SiON/Si gate stack;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01
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