Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126665
Reference10 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
3. Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
4. Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
5. Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN
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