Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123071
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4. Defect structure in selectively grown GaN films with low threading dislocation density
5. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
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