Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123331
Reference22 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
3. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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2. Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique;Applied Physics Letters;2021-01-04
3. Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on ( 1 ¯ 1 ¯2 2 ¯) semipolar planes;Journal of Applied Physics;2020-12-07
4. (Invited) Strain Engineered Crack-Free GaN on Si for Integrated Vertical High Power GaN Devices with Si CMOS;ECS Transactions;2016-08-18
5. Clustered quantum dots in single GaN islands formed at threading dislocations;Japanese Journal of Applied Physics;2016-03-31
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