Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique-Reference-Cited by-同舟云学术

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

Published:2021-01-04 Issue:1 Volume:118 Page:012105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tang Wenxin¹²^ORCID,Chen Fu¹²^ORCID,zhang Li²,Xu Kun²,Zhang Xuan²,Deng Xuguang²,Wei Xing¹²,Sun Chi¹²^ORCID,Cai Yong¹²,Zhang Xiaodong¹²,Yu Guohao²^ORCID,Zhang Baoshun¹²³^ORCID

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, People's Republic of China

2. Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu 215123, People's Republic of China

3. Suzhou Powerhouse Electronics Co., Ltd., Suzhou 215123, People's Republic of China

Funder

the Youth Innovation Promotion Association CAS

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0033380

Reference22 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

3. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

4. (Invited) Ion Implantation into GaN and Implanted GaN Power Transistors

5. Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

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1. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

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