Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy

Published:1999-04-01 Issue:Part 2, No. 4A Volume:38 Page:L356-L359
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sone Hiroki,Nambu Shingo,Kawaguchi Yasutoshi,Yamaguchi Masahito,Miyake Hideto,Hiramatsu Kazumasa,Iyechika Yasushi,Maeda Takayoshi,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique;Applied Physics Letters;2021-01-04

2. Selective mask formation and gallium nitride template fabrication on patterned sapphire substrates for light-emitting diodes;AIP Advances;2020-09-01

3. High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth;Japanese Journal of Applied Physics;2019-05-09

4. Effect of off-angle of stripe patterns on facet stability and embedding in selective-area hydride vapor phase epitaxy growth;Japanese Journal of Applied Physics;2019-04-16

5. Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures;Journal of Electronic Materials;2018-08-13

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