Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography-Reference-Cited by-同舟云学术

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Published:2018-10-14 Issue:14 Volume:124 Page:144502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Durrani Zahid¹,Jones Mervyn¹,Abualnaja Faris¹,Wang Chen¹,Kaestner Marcus²,Lenk Steve²,Lenk Claudia²^ORCID,Rangelow Ivo W.²^ORCID,Andreev Aleksey³

Affiliation:

1. Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom

2. Institute of Micro- and Nanoelectronics, Department of Micro- and Nanoelectronic Systems (MNES), Ilmenau University of Technology, Gustav-Kirchhoff-Str.1, 98693 Ilmenau, Germany

3. Hitachi Cambridge Laboratory, J. J. Thomson Avenue, CB3 0HE Cambridge, United Kingdom

Funder

European Union 7th Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050773

Reference57 articles.

1. Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

2. Observation of the Linear Stark Effect in a Single Acceptor in Si

3. Excited-state spectroscopy of single Pt atoms in Si

4. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

5. Single-donor ionization energies in a nanoscale CMOS channel

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