Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire-Reference-Cited by-同舟云学术

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Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

Published:2006-11-16 Issue:20 Volume:97 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Sellier H.,Lansbergen G. P.,Caro J.,Rogge S.,Collaert N.,Ferain I.,Jurczak M.,Biesemans S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.97.206805/fulltext

Reference18 articles.

1. Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: a statistical 3D `atomistic' simulation study

2. A silicon-based nuclear spin quantum computer

3. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

4. Electron spin relaxation times of phosphorus donors in silicon

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1. Prospects of silicide contacts for silicon quantum electronic devices;Applied Physics Letters;2024-07-01

2. Transport Spectroscopy of Donor/Quantum Dot Interactive System in Silicon Nano‐Transistors;Advanced Quantum Technologies;2024-04-24

3. Noise properties in the Coulomb blockade region of FinFETs;Japanese Journal of Applied Physics;2024-03-01

4. Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs;Applied Physics Express;2023-07-01

5. Single-Charge Tunneling in Codoped Silicon Nanodevices;Nanomaterials;2023-06-22

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