Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: a statistical 3D `atomistic' simulation study
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/10/i=2/a=309/pdf
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