Investigation of the Effects and the Random-Dopant-Induced Variations of Source/Drain Extension of 7-nm Strained SiGe n-Type FinFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8617115/08574939.pdf?arnumber=8574939
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM Cells;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method;Semiconductor Science and Technology;2022-04-21
3. Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges;Journal of Computational Electronics;2022-01-15
4. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme;IEEE Transactions on Electron Devices;2021-11
5. Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm);Journal of Computational Electronics;2021-05-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3