Single Dopant Lithography for the Fabrication of Atomic-scale Devices and Quantum Systems-Reference-Cited by-同舟云学术

Single Dopant Lithography for the Fabrication of Atomic-scale Devices and Quantum Systems

Published:2024-06-27 Issue: Volume:117 Page:23-28
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Container-title:2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
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Author:

Rangelow Ivo W.¹,Schenkel Thomas²,Persaud Arun²,Durrani Zahid³,Jones Mervyn³,Pietscher Hans-Georg⁴,Dietrich Fabian⁴,Tan Aditya S.⁴,Stauffenberg Jaqueline⁵,Manske Eberhard⁵,Froehlich Thomas⁵,Karpuzov Dimitre⁶

Affiliation:

1. Technische Universität Ilmenau,NanoScale Systems,Ilmenau,Germany,98693

2. Lawrence Berkeley National Laboratory,Accelerator Technology and Applied Physics Division,Berkeley,CA,USA,94720

3. Imperial College London, S. Kensington,Department of Electrical and Electronic Engineering,London,UK,SW7 2AZ

4. nano analytik GmbH,Ilmenau,Germany,98693

5. Technische Universitat Ilmenau,Faculty of Mechanical Engineering,Ilmenau,Germany,98693

6. University of Alberta,Edmonton,Alberta,Canada,T6G 2R3

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10613861/10613931/10614012.pdf?arnumber=10614012

Reference42 articles.

1. Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

2. Room-Temperature Measurement of Electrostatically Coupled, Dopant-Atom Double Quantum Dots in Point-Contact Transistors

3. Room temperature Szilard cycle and entropy exchange at the Landauer limit in a dopant atom double quantum dot silicon transistor

4. Development of single-ion implantation - controllability of implanted ion number;Matsukawa,1997

5. Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions