Abstract
Abstract
Room-temperature (RT) thermodynamics of a dopant-atom double quantum dot (DQD) silicon transistor are extracted using measurements of the dual gate charge stability diagram. Current traces corresponding to electron exchange in the Szilard one-electron gas ‘Maxwell Demon’ thermodynamic cycle are determined. Theoretical analysis, based on energy state shifts within the generalised DQD charge stability diagram, is used to map the Szilard cycle entropy exchange to the stability diagram. The restriction on the inter-QD coupling energy E
m > kT, necessary to observe DQD operation, is inherently seen to satisfy the Landauer limit, kTln2, for the minimum energy consumption per cycle for 1 bit. Associated entropy flows are extracted and simulated using single-electron Monte Carlo equivalent circuit simulations, from 4.2 to 290 K. An entropy valley, tending to the Szilard limit minimum of −kln2,
occurs at degeneracy between neighbouring electron states, with traces persisting to RT. Changes in gate cycle trajectory, device capacitance, and temperature are characterised to establish conditions for RT operation.
Funder
Engineering and Physical Sciences Research Council
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献