Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

Published:2016-06-14 Issue:22 Volume:119 Page:224305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kruse J. E.¹²,Lymperakis L.³^ORCID,Eftychis S.¹,Adikimenakis A.²,Doundoulakis G.¹²,Tsagaraki K.²,Androulidaki M.²,Olziersky A.⁴,Dimitrakis P.⁴^ORCID,Ioannou-Sougleridis V.⁴,Normand P.⁴,Koukoula T.⁵,Kehagias Th.⁵^ORCID,Komninou Ph.⁵,Konstantinidis G.²^ORCID,Georgakilas A.¹

Affiliation:

1. Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion, Greece

2. Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion, Greece

3. Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany

4. Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens, Greece

5. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

Funder

General Secretariat for Research and Technology (GSRT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953594

Reference43 articles.

1. The Blue Laser Diode

2. InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

3. Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

4. Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

5. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

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