Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4827396
Reference36 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Electron mobility in indium nitride
4. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
5. Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
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1. Electron transport properties in thin InN layers grown on InAlN;Materials Science in Semiconductor Processing;2023-03
2. Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE;Materials;2019-09-30
3. Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates;Thin Solid Films;2019-02
4. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution;physica status solidi (a);2017-07-18
5. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26
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