Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution-Reference-Cited by-同舟云学术

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Published:2017-07-18 Issue:10 Volume:214 Page:1700190
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rozhavskaya Mariia M.¹,Kukushkin Sergey A.²³,Osipov Andrey V.²³,Myasoedov Alexandr V.⁴,Troshkov Sergey I.⁴,Sorokin Lev M.⁴,Brunkov Pavel N.³⁴,Baklanov Alexandr V.⁴,Telyatnik Rodion S.²,Juluri Raghavendra R.⁵,Pedersen Kjeld¹,Popok Vladimir N.¹

Affiliation:

1. Department of Physics and Nanotechnology; Aalborg University; Skjernvej 4A Aalborg, 9220 Denmark

2. Institute of Problems of Mechanical Engineering; Russian Academy of Sciences; Bolshoi pr. 61 St. Petersburg 199178 Russia

3. St. Petersburg National Research University of Information Technologies; Mechanics and Optics (ITMO University); Kronverkskii pr. 49 St. Petersburg 197101 Russia

4. Ioffe Physical-Technical Institute; Russian Academy of Sciences; Politekhnicheskaya str. 26 St. Petersburg 194021 Russia

5. Interdisciplinary Nanoscience Center (iNANO); Aarhus University; Gustav Wieds Vej 14 Aarhus C 8000 Denmark

Funder

Russian Scientific Foundation

Innovation Fund Denmark

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700190/fullpdf

Reference30 articles.

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2. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

3. A Survey of Wide Bandgap Power Semiconductor Devices

4. An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

5. Real-time observation of self-limiting SiO2/Si decomposition catalysed by gold silicide droplets

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