Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2921783
Reference23 articles.
1. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
2. Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys
3. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
4. Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors
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